Publications

2009

• Guided growth of in-plane silicon nanowires
  
  • Yu L. W.
  • Oudwan M.
  • Moustapha O.
  • Fortuna F.
  • Roca I Cabarrocas P.
  Applied Physics Letters, American Institute of Physics, 2009, 95, pp.113106. We report on a guided growth of silicon nanowires (SiNWs) based on an in-plane solid-liquid-solid mechanism, which provides a general strategy to deploy SiNWs precisely into desired circuits. During a reacting-gas-free annealing process, the SiNWs are activated to grow and be guided into predefined patterns by effective controlling the movement of the catalyst drops. We demonstrate three different approaches to achieve a guided growth of SiNWs, which are as follows: (1) by an a-Si: H channel, (2) by a step edge, and (3) by an a-Si : H edge. These results provide a design principle for future SiNWs-based nanodevices. (C) 2009 American Institute of Physics. (10.1063/1.3227667)
  DOI : 10.1063/1.3227667
• Gas phase and surface kinetics in plasma and hot filament-enhanced catalytic chemical vapor deposition of carbon nanostructures
  
  • Le Normand Francois
  • Gulas M.
  • Veis Pavel
  • Cojocaru Costel Sorin
  • Bourée Jean Eric
  Thin Solid Films, Elsevier, 2009, 517 (12), pp.3466--3471. Simulations of the gas phase chemistry (C2H2/H2) coupled with surface reactions for the catalytic growth of carbon nanostructures (nanotubes/nanofibers), using different activation modes of catalytic chemical vapor deposition (CCVD) process, are presented. Deposits issued from thermal CCVD, hot-filament CCVD, plasma- enhanced CCVD and plasma-enhanced combined with hot-filament CCVD are compared to simulations of the gas phase and surface kinetics. The influence of the activation elements is described in detail. According to these simulations taking into account optical emission spectroscopy data, gas phase composition and linear growth rate of tubular nanostructures are predicted in good agreement with the experimental observations. (10.1016/j.tsf.2009.01.079)
  DOI : 10.1016/j.tsf.2009.01.079
• Organisation of carbon nanotubes and semiconductor nanowires using lateral alumina templates
  
  • Pribat Didier
  • Cojocaru Costel Sorin
  • Gowtham M.
  • Marquardt B.
  • Wade T.
  • Wegrowe Jean Eric
  • Kim B.S.
  Comptes Rendus. Physique, Académie des sciences (Paris), 2009, 10 (4), pp.320--329. Carbon nanotubes and semiconductor nanowires have been thoroughly studied for the future replacement of silicon-based com- plementary metal oxide semiconductor (CMOS) devices and circuits. However, the organisation of these nanomaterials in dense transistor arrays, where each device is capable of delivering drive currents comparable with those of their silicon counterparts is still a big challenge. Here, we present a novel approach to the organisation of carbon nanotubes and semiconductor nanowires, based on the use of porous lateral alumina templates obtained by the controlled anodic oxidation of aluminium thin films. We discuss the growth of nanomaterials inside the pores of such templates and show the feasibility of our approach. Our first results point to further work on controlling the synthesis of catalyst nanoparticles at the bottom of the pores, these particles being necessary to nucleate and sustain the growth of carbon nanotubes or semiconductor nanowires. (10.1016/j.crhy.2009.05.007)
  DOI : 10.1016/j.crhy.2009.05.007