Publications

2009

• Conductance of disordered semiconducting nanowires and carbon nanotubes: a chain of quantum dots
  
  • Dayen Jf
  • Wade Tl
  • Rizza G.
  • Golubev Ds
  • Cojocaru C.S.
  • Pribat D.
  • Jehl X.
  • Sanquer M.
  • Wegrowe J.E.
  European Physical Journal: Applied Physics, EDP Sciences, 2009, 48 (1), pp.10604. A comparative study of the low temperature conductivity of an ensemble of multiwall carbon nanotubes and semiconductor nanowires is presented. The quasi one-dimensional samples are made in nanoporous templates by electrodeposition and CVD growth. Three different structures are studied in parallel: multiwall carbon nanotubes, tellurium nanowires, and silicon nanowires. It is shown that the Coulomb blockade regime dominates the electronic transport below 50 K, together with weak and strong localization effects. In the Coulomb blockade regime, a scaling law of the conductance measured as a func- tion of the temperature and the voltage is systematically observed. This allows a single scaling parameter α to be defined. This parameter accounts for the specific realization of the "disorder", and plays the role of a fingerprint for each sample. Correlations between α and the conductance measured as a function of temperature and voltage, as a function of the perpendicular magnetic field, and as a function of the temperature and voltage in the localized regime below 1 K have been performed. Three universal laws are reported. They relate the coefficient α (1) to the normalized Coulomb blockade conductance GT (α), (2) to the phase coherence length lφ (α), and (3) to the activation energy Ea(α). These observations suggest a description of the wires and tubes in terms of a chain of quantum dots; the wires and tubes break into a series of islands. The quantum dots are defined by conducting islands with a typical length on the order of the phase coherence length separated by poorly conducting regions (low density of carriers or potential barriers due to defects). A corresponding model is developed in order to put the three universal laws in a common frame. (10.1051/epjap/2009132)
  DOI : 10.1051/epjap/2009132
• Characterization of grating structures by Mueller polarimetry in presence of strong depolarization due to finite spot size and spectral resolution
  
  • Foldyna Martin
  • Garcia-Caurel Enric
  • de Martino Antonello
  • Ossikovski Razvigor
  • Licitra C.
  Optics Communications, Elsevier, 2009, 282, pp.735.
• Guided growth of in-plane silicon nanowires
  
  • Yu L. W.
  • Oudwan M.
  • Moustapha O.
  • Fortuna F.
  • Roca I Cabarrocas P.
  Applied Physics Letters, American Institute of Physics, 2009, 95, pp.113106. We report on a guided growth of silicon nanowires (SiNWs) based on an in-plane solid-liquid-solid mechanism, which provides a general strategy to deploy SiNWs precisely into desired circuits. During a reacting-gas-free annealing process, the SiNWs are activated to grow and be guided into predefined patterns by effective controlling the movement of the catalyst drops. We demonstrate three different approaches to achieve a guided growth of SiNWs, which are as follows: (1) by an a-Si: H channel, (2) by a step edge, and (3) by an a-Si : H edge. These results provide a design principle for future SiNWs-based nanodevices. (C) 2009 American Institute of Physics. (10.1063/1.3227667)
  DOI : 10.1063/1.3227667